********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Apr 28, 2014
*ECN S14-0884, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si2372DS D G S 
M1 3 GX S S NMOS W= 641317u L= 0.3u 
M2 S GX S D PMOS W= 641317u L= 0.28u
R1 D 3 2.384e-02 4.924e-03 1.363e-05 
CGS GX S 1.606e-10 
CGD GX D 5.735e-12 
RG G GY 0.9 
RTCV 100 S 1e6 -2.173e-04 -4.294e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 641317u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 1.746e-05 NSUB = 8.535e+16 
+ KAPPA = 6.540e-02 NFS = 2.405e+11 
+ LD = 0 IS = 0 TPG = 1 CAPOP = 12 ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 2.860e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-08 TREF = 25 BV = 31 
+RS = 5.519e-03 N = 1.339e+00 IS = 8.204e-10 
+EG = 1.237e+00 XTI = 2.983e-01 TRS = 3.395e-03 
+CJO = 2.836e-10 VJ = 8.964e-01 M = 4.648e-01 ) 
.ENDS 
